| Some theoretical approaches of an alternative organic semiconductor device are presented in this work. The Organic transistors are based either on n-type or p-type or mixed p/n overlapped layers. The carrier modulation insides different films is carried out by two gates electrodes, as is usual in the thin film transistor field. This paper introduces some novel aspects for these kinds of organic transistors, selecting a suitable biasing regime. The simulations emphasize a stronger influence on the static characteristics when the superior gate is acted. One of the novelties of this paper concerns the electrical conduction occurrence by two simultaneous channels, in comparison with one volume channel conduction, for different gate voltage regimes. A similar work regime is also encountered in the SOI devices with ultra-thin films that develop a volume channel. The volume channel regime is advantageously when the technology of fabrication of the organic semiconductors on different insulators provides an extremely charged interface, which can degrade the surface currents. Comparisons and applications for both situations – with one volume channel or two accumulation channels – are finally discussed. The vertical n/p junction arose between the upper n-channel and the bottom p-channel, offers novel physical properties and prevented any interaction among channels. The device simulations revealed multiple behaviors, depending on the Top and Bottom Gate voltages, if a positive drain-source voltage is applied. |
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